| PART |
Description |
Maker |
| LR324 LR324D |
Internally Frequency Compensated Large Voltage Gain
|
Leshan Radio Company
|
| SA5532NG SE5532AD8G |
Internally Compensated Dual Low Noise Operational Amplifier DUAL OP-AMP, 5000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDIP8
Internally Compensated Dual Low Noise Operational Amplifier DUAL OP-AMP, 3000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDSO8
|
ON Semiconductor
|
| MC1741C MC1741CD MC1741CP1 MC1741C_D ON0960 |
Internally Compensated, High Performance Operational Amplifier
From old datasheet system
OPERATIONAL AMPLIFIER
|
MOTOROLA INC
ON Semiconductor
|
| MC1747CP2 MC1747 MC1747CL MC1747C MC1747P2 MC1747C |
Internally Compensated, High Performance Operational Amplifiers
Dual Operational Amplifiers
|
MOTOROLA[Motorola, Inc]
|
| ISL6531 ISL6531CB |
PWM Controller, Dual, VDDQ =2.5V, VREF =VDDQ/2 @ 1% Reg, with S3 Sleep Mode, VIN =5V, VTT Regulator Internally Compensated
Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination
|
INTERSIL[Intersil Corporation]
|
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-G |
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
|
Catalyst Semiconductor
EEPROM
ON Semiconductor
NXP Semiconductors N.V.
|
